| 1. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon integrated 850-nm hybrid vertical-cavity laser for life science applications
- 2017
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Ingår i: VCSEL Day 2017.
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Konferensbidrag (refereegranskat)abstract
- The integration of efficient laser sources on silicon would enable fully integrated silicon photonic circuits with a high degree of functionality and performance complexity for many applications [1]. Different integration concepts have therefore been suggested, where one such technique is the heterogeneous integration of a vertical-cavity laser (VCL), referred to as a hybrid VCL. It is promising as it has potential to offer low drive currents, high modulation bandwidths, and small footprint [2-4]. In-plane emission with waveguide-coupling can be achieved by an intra-cavity waveguide embossed with a weak diffraction grating, as an example [5]. Integration of such short-wavelength laser sources on a silicon-nitride (SiN) waveguide platform on silicon may enable fully integrated silicon photonic circuits for applications not only in short-reach optical interconnects but also in life science and bio-photonics. As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with out-of-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6-8]. We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed [8]. To be able to demonstrate in-plane emission with SiN waveguide coupling from our hybrid 850-nm VCLs, our next step is to add a SiN waveguide structure with embossed grating on top of the dielectric DBR, before adhesively bonding the AlGaAs-material. So far, based on numerical simulations, we have designed a device that is predicted to yield a slope efficiency of ~0.3 W/A at 25 °C for the light coupled to a single-mode waveguide, while maintaining a sub-mA threshold current for the lasing [9]. This work is supported by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 688519 (PIX4life), the Swedish Foundation for Strategic Research (SSF), and the European FP7-ERC-InSpectra Advanced Grant. References [1] Z. Zhou et al., Light Sci. Appl., vol. 4, no. 11, p. e358, 2015. [2] Y. Tsunemi et al., Opt. Express, vol. 21, no. 23, p. 28685, 2013. [3] J. Ferrara et al., Opt. Express, vol. 23, no. 3, p. 2512, 2015. [4] G.C. Park et al., Laser Photon. Rev., vol. 9, no. 3, p. L11, 2015. [5] D. A. Louderback et al., Electron. Lett., vol. 40, no. 17, p. 1064, 2004. [6] E.P. Haglund et al., Opt. Express, vol. 23, no. 26, p. 33634, 2015. [7] E.P. Haglund et al., IEEE Photon. Technol. Lett., vol. 28, no. 8, p. 856, 2016. [8] E.P. Haglund et al., IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, p. 1700109, 2017. [9] S. Kumari et al., Submitted to IEEE Photon. J.,2017.
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| 2. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Silicon-Integrated Hybrid-Vertical-Cavity Lasers for Life Science Applications
- 2017
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Ingår i: 2017 IEEE Photonics Conference. - 9781509065783
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Konferensbidrag (refereegranskat)abstract
- Hybrid 850-nm-wavelength vertical-cavity lasers formed by adhesively bonding AlGaAs-material to a dielectric distributed Bragg reflector on Silicon has experimentally enabled sub-mA threshold current and 25 Gb/s modulation speed. Numerical calculations estimate >0.3 mW/mA slope efficiency for in-plane SiN waveguide coupled light using an intra-cavity grating.
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| 3. |
- Haglund, Emanuel, 1988, et al.
(författare)
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20-Gb/s Modulation of Silicon-Integrated Short-Wavelength Hybrid-Cavity VCSELs
- 2016
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Ingår i: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 28:8, s. 856 - 859
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Tidskriftsartikel (refereegranskat)abstract
- We investigate the dynamics of silicon-integrated 850-nm-wavelength hybrid-cavity vertical-cavity surface-emitting lasers (VCSELs). The VCSELs consist of a GaAs-based half-VCSEL attached to a dielectric distributed Bragg reflector on a silicon substrate using ultra-thin divinylsiloxane-bis-benzocyclobutene adhesive bonding. A 5-µm oxide aperture diameter VCSEL, with a small signal modulation bandwidth of 11 GHz, supports data transmission at bit rates up to 20 Gb/s. The modulation bandwidth and the large signal modulation characteristics are found to be impaired by the high thermal impedance.
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| 4. |
- Haglund, Erik, 1985, et al.
(författare)
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30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s
- 2015
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 51:14, s. 1096-1097
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Tidskriftsartikel (refereegranskat)abstract
- A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of
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| 5. |
- Haglund, Erik, 1985, et al.
(författare)
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850 nm datacom VCSELs for higher-speed and longer-reach transmission
- 2013
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Ingår i: European VCSEL Day 2013.
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Konferensbidrag (refereegranskat)abstract
- The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
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| 6. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Dynamic properties of silicon-integrated short-wavelength hybrid-cavity VCSEL
- 2016
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510600010 ; 9766
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Konferensbidrag (refereegranskat)abstract
- We present a vertical-cavity surface-emitting laser (VCSEL) where a GaAs-based “half-VCSEL” is attached to a dielectric distributed Bragg reflector on silicon using ultra-thin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding, creating a hybrid cavity where the optical field extends over both the GaAs- and the Si-based parts of the cavity. A VCSEL with an oxide aperture diameter of 5 μm and a threshold current of 0.4 mA provides 0.6 mW output power at 845 nm. The VCSEL exhibits a modulation bandwidth of 11 GHz and can transmit data up to 20 Gbps.
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| 7. |
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| 8. |
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| 9. |
- Haglund, Erik, 1985, et al.
(författare)
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High-Speed VCSELs with Strong Confinement of Optical Fields and Carriers
- 2016
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Ingår i: Journal of Lightwave Technology. - : Institute of Electrical and Electronics Engineers (IEEE). - 0733-8724 .- 1558-2213. ; 34:2, s. 269-277
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Tidskriftsartikel (refereegranskat)abstract
- We present the design, fabrication, and performance of our latest generation high-speed oxide-confined 850-nm verticalcavity surface-emitting lasers. Excellent high-speed properties are obtained by strong confinement of optical fields and carriers. Highspeed modulation is facilitated by using the shortest possible cavity length of one half wavelength and placing oxide apertures close to the active region to efficiently confine charge carriers. The resulting strong current confinement boosts internal quantum efficiency, leading to low threshold currents, high wall-plug efficiency, and state-of-the-art high-speed properties at low bias currents. The temperature dependent static and dynamic performance is analyzed by current-power-voltage and small-signal modulation measurements.
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| 10. |
- Haglund, Emanuel, 1988, et al.
(författare)
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Hybrid vertical-cavity laser integration on silicon
- 2017
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Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. - 9781510606852 ; 10122, s. 101220H-
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Konferensbidrag (refereegranskat)abstract
- The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.
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